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| MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices . . . designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com * hFE = 100 (Min) @ IC = 0.5 Adc * * * * * = 10 (Min) @ IC = 2.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE15035 High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO-220AB Compact Package Epoxy meets UL 94 V-0 @ 0.125 in ESD Ratings: Machine Model: C Human Body Model: 3B 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS MARKING DIAGRAM & PIN ASSIGNMENT 4 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg MJE15034 MJE15035 350 350 5.0 4.0 8.0 1.0 50 0.40 2.0 0.016 - 65 to + 150 Unit Vdc Vdc Vdc Adc 1 Adc Watts W/_C Watts W/_C _C 2 3 TO-220AB CASE 221A STYLE 1 MJE1503x LLYWW STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 2.5 62.5 Unit _C/W _C/W MJE1503x LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device MJE15034 MJE15035 Package TO-220AB TO-220AB Shipping 50 Units/Rail 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 November, 2003 - Rev. 2 Publication Order Number: MJE15034/D MJE15034 NPN, MJE15035 PNP IC, COLLECTOR CURRENT (AMPS) TA TC PD, POWER DISSIPATION (WATTS) 10 100mS DC 1.0 3.0 60 2.0 40 TC 1.0 20 TA 0.1 0 0 0 20 40 60 80 100 120 140 160 0.01 1.0 10 100 1000 T, TEMPERATURE (C) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Figure 2. Active Region Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Symbol Min Max Unit Collector-Emitter Sustaining Voltage (Note 1) Collector Cutoff Current Emitter Cutoff Current (IC = 10 mAdc, IB = 0) VCEO(sus) ICBO IEBO 350 - - - Vdc (VCB = 350 Vdc, IE = 0) (VBE = 5.0 Vdc, IC = 0) 10 10 Adc Adc ON CHARACTERISTICS (Note 1) DC Current Gain hFE (IC = 0.1 Adc, VCE = 5.0 Vdc) (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, IB = 0.1 Adc) 100 100 50 10 - - - - - - - Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE(sat) VBE(on) 0.5 1.0 Vdc Vdc (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 30 - MHz 1. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. 2. fT = hfe* ftest. 1.0 0.7 0.5 0.3 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 ZJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 P(pk) 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 SINGLE PULSE 0.05 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t, TIME (ms) Figure 3. Thermal Response http://onsemi.com 2 MJE15034 NPN, MJE15035 PNP 1000 TJ = 150C hFE, DC CURRENT GAIN 25C 100 -40C hFE, DC CURRENT GAIN 1000 TJ = 150C 25C -40C 100 10 10 1.0 0.01 0.1 1.0 10 1.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 5.0 V NPN MJE15034 1000 TJ = 150C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 25C 100 -40C 1000 Figure 5. DC Current Gain, VCE = 5.0 V PNP MJE15035 TJ = 150C 25C -40C 100 10 10 1.0 0.01 0.1 1.0 10 1.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 20 V NPN MJE15034 VCE, COLLECTOR-EMITTER VOLTAGE (V) 10 IC/IB = 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 10 Figure 7. DC Current Gain, VCE = 20 V PNP MJE15035 IC/IB = 10 1.0 25C TJ = 150C 0.1 -40C 1.0 -40C 0.1 TJ = 150C 25C 0.01 0.01 0.01 0.01 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. VCE(sat) NPN MJE15034 Figure 9. VCE(sat) PNP MJE15035 http://onsemi.com 3 MJE15034 NPN, MJE15035 PNP 10 BASE-EMITTER VOLTAGE (V) BASE-EMITTER VOLTAGE (V) IC/IB = 10 10 IC/IB = 10 1.0 -40C 25C TJ = 150C 1.0 -40C 25C TJ = 150C 0.1 0.01 0.1 1.0 10 0.1 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 10. VBE(sat) NPN MJE15034 VBE(on), BASE-EMITTER VOLTAGE (V) VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 1.0 0.8 0.6 25C 0.4 TJ = 150C 0.2 0.0 0.01 -40C 1.4 1.2 1.0 0.8 0.6 0.4 Figure 11. VBE(sat) PNP MJE15035 -40C 25C TJ = 150C 0.2 0.0 0.01 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 12. VBE(on) NPN MJE15034 fT, CURRENT BANDWIDTH PRODUCT (MHz) fT, CURRENT BANDWIDTH PRODUCT (MHz) 80 70 60 50 40 30 20 10 0 0.001 0.01 0.1 1.0 10 VCE= 10 V TJ = 25C f test = 1 MHz 100 Figure 13. VBE(on) PNP MJE15035 80 TJ = 25C f test = 1 MHz 60 40 VCE= 10 V 20 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 14. Typical Current Gain Bandwidth Product NPN MJE15034 Figure 15. Typical Current Gain Bandwidth Product PNP MJE15035 http://onsemi.com 4 MJE15034 NPN, MJE15035 PNP PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR R J http://onsemi.com 5 MJE15034 NPN, MJE15035 PNP ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJE15034/D |
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